性别

女

出生年月

1980.3

最高学历、学位

研究生、博士

职称

教授

职务

电子邮箱

xdwang0416@163.com

个人简介

一、基本情况：

2008年6月在中国科学院上海光学精密机械研究所完成硕博连读，获得材料学博士学位。2008年7月至今在苏州科技大学工作。2015.03 -2016.03新加坡南洋理工大学物理与数学系访问学者。在校期间主讲半导体物理与器件、激光原理、光纤技术等多门本科生及研究生专业课程。工作期间获得“优秀青年教师标兵”“巾帼标兵”“寒山教育奖”等荣誉称号。

二、主要研究领域及学术成就：

主要从事光功能材料的研究工作，具体从事稀土掺杂晶态材料的生长、微结构、光谱和激光性能的研究工作。系统研究了掺Yb³⁺, Ce³⁺, Nd³⁺的Y₃Al₅O₁₂，Lu₃Al₅O₁₂和YAlO₃晶体材料的生长、光谱和激光性能，同时研究了稀土掺杂GaN微纳米晶材料的制备和表征，稀土掺杂宽禁带氮化物半导体的光电特性、微结构研究及光电器件的研究。作为主要骨干成员参与过国家杰出青年基金和国家高技术研究发展计划（863计划）等项目的研究工作。目前主持并完成国家自然科学基金项目一项，江苏省自然科学基金项目面上项目一项，江苏省自然科学基金项目（青年科技人才专项）一项，江苏省高校自然科学基金项目一项。以第一作者及通讯作者身份在Journal of Luminescence,Journal of Alloys and Compounds, Optical Materials Express,Optical Materials, Spectrochimica Acta Part A,Science in China等专业刊物上发表论文40余篇，授权中国发明专利3项。

三、代表性科研成果：

[1]H. Ma,X. Wang*, F. Chen, J. Chen, X. Zeng, X. Gao, D. Wang, H. Mao, K. Xu. Luminescence properties and energy transfer mechanism of Eu³⁺and Tm³⁺co-doped AlN thin films.Journal of Luminescence, 2021, 236: 118082.

[2] J. Wang,X. Wang*, J. Chen, X. Gao, X. Zeng,H. Mao, K. Xu, Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD,Journal of Alloys and Compounds. 2021, 870, 159477.

[3]Xiaodan Wang,Mingming Yang，Xionghui Zeng, et al.Investigation of energy transfer mechanism in Er³⁺ and Tm³⁺doped AlN crystalline films[J]. Journal of Alloys and Compounds, 2017, 726: 209-213

[4]Xiaodan Wang, Yajuan Mo, Xionghui Zeng et al. Simultaneous emission of red, green, and blue in Pr, Er, and Tm co-implanted GaN thin films[J].Materials Chemistry and Physics, 2017, 199, 567-570

[5]Xiaodan Wang,Yajuan Mo, Xionghui Zeng, et al. Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films[J].Optical Materials Express, 2016, 6(5):1692-1700

[6]Wang Xiaodan,Mo Yajuan, Zeng Xionghui, Mao Hongmin, Wang Jianfeng, Xu Ke. Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation,Chinese Optics Letters, 2016, 14(5):051602-1-4

[7]Wang Xiaodan,Mo Yajuan, Shi Jianping, Zeng Xionghui, Wang Jianfeng, Xu Ke. Investigation on Luminescent Properties of Eu-doped GaN Polycrystalline Prepared by Solid-state Reaction,Journal of the Chinese Ceramic Society, 2016, 3(2): 84-89.

[8] Wang Xiaodan, ZENG XiongHui, XU Ke, MAO HongMin, MA ChunLan. “Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodoluminescence spectroscopy”.Science China Physics, Mechanics & Astronomy, 2014,57(4):628-631

[9]Xiaodan Wang, Hongmin Mao,Chunlan Ma, Jun Xu, Xionghui Zeng.“Effects of Ce³⁺energy level structure on the absorption and luminescence properties of Ce-doped YAlO₃, Y₃Al₅O₁₂ and LaAlO₃single crystals”,Chinese Optics Letters,2012, 10(7):071601-1-3

[10]Xiaodan Wang, Chunlan Ma, Taocheng Zang, Guangjun Zhao, Jun Xu.“Effects of Annealing Temperature on Ce:YAlO₃Single Crystal”.Journal of Synthetic crystals, 2011, 40(3):635-638

[11]Xiaodan Wang, Tao Pan, Taocheng Zang, Jiankang Li, Zhiwei Zhao, Lianhan Zhang, Jun Xu.“Comparison of energy structure and spectral properties of Ce: LaAlO₃and Ce: Lu₂(SiO₄)O,Science in China: Series E Technological Sciences,2009, 52(12):3678-3682

[12]Xiaodan Wang, Zhiwei Zhao, Xiaodong Xu, Jingya Wang, Jun Xu, Gilbert Bourdet, J.-C. Chanteloup “Bonding quality of Yb:Y₃Al₅O₁₂/Y₃Al₅O₁₂ composite crystals”,Science in China: Series E Technological Sciences,2008, 51(9):1457-1463

[13]Xiaodan Wang, Xiaodong Xu, Zhiwei Zhao, Benxue Jiang, Jun Xu, Guangjun Zhao, Peizhen Deng, Gilbert Bourdet, J.-C. Chanteloup.“Comparison of fluorescence spectra of Yb:Y₃Al₅O₁₂ and Yb:YAlO₃single crystals”Optical Materials,2007, 29:1662-1666

[14]Xiaodan Wang, Xiaodong Xu, Xionghui Zeng, Zhiwei Zhao, Benxue Jiang, Xiaoming He, Jun Xu.“Effects of Yb concentration on the spectroscopic properties of Yb:Y₃Al₅O₁₂”,Spectrochimica Acta Part A,2006, 63:49-54

[15]王晓丹，高崴崴，莫亚娟，毛红敏，“一种注入稀土元素的白光发射氮化铝材料、制备方法及应用”，2016年2月授权，专利号：ZL201410304645.4

[16]王晓丹，毛红敏，马春兰，“一种稀土掺杂GaN发光粉体及其制备方法”，2014年11月授权,专利号：ZL201310181703.4

[17] 王晓丹，臧涛成，程新利，毛红敏，马春兰，“一种掺Er的GaN荧光粉及其制备方法”. 2012年12月授权，专利号：ZL 201110403427.2